WebMetal Oxide Semiconductor Field Effect Transistor, IPW60R040C7 Datasheet, IPW60R040C7 circuit, IPW60R040C7 data sheet : INFINEON, alldatasheet, Datasheet, Datasheet search … WebTable 7. Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 72 A ISDM (1) Source-drain current (pulsed) - 288 A VSD (2) Forward on voltage VGS = 0 V, ISD = 72 A - 1.6 V trr Reverse recovery time ISD = 72 A, di/dt = 100 A/µs, VDD = 60 V (see Figure 15. Test circuit for inductive load switching and diode …
IPW60R031CFD7 Datasheet(PDF) - Infineon Technologies AG
WebIPW60R040CFD7 Manufacturer Infineon Technologies MFR.Part # IPW60R040CFD7 JLCPCB Part # C537448 Package PG-TO-247-3 Description 600V 50A 40mΩ@10V,24.9A … WebOther Company Partner Number Package Manufacturer Fuji Electric Part Number Data Sheet Compatibility Number; IPA60R060C7: TO-220 FullPAK: Infineon: FMV60N070S2 smart goal for contact centre staff
1 x 60R040F7 IPW60R040CFD7 Transistor TO-247 650V 50A
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