Irff130 0639
WebIRFF130 Product details 8.0A, 100V, 0.180 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power … WebIRFF130. 8.0A, 100V, 0.180 Ohm, N-Channel Power MOSFET. This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, …
Irff130 0639
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WebIRFF130: Infineon Technologies AG Benefits: Hermetically packaged power MOSFET, Packaged on a MIL-PRF-19500 manufacturing line. 1975. 10 $9.6840; 100 $8.8040; 1000 $8.3640; 10000 $8.1000; Show All; RFQ: WebIRFF130 JANTX2N6796 JANTXV2N6796 1 2024-11-20 Product Summary Part Number BVDSS R DS(on) ID IRFF130 100V 0.18: 8.0A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET ® TRANSISTORS THRU-HOLE TO-205AF (TO-39) PD-90430D Description For Footnotes, refer to the page 2. International Rectifier HiRel Products, Inc. 100V, N …
WebIRFF130 Datasheet, PDF - Alldatasheet All Datasheet Distributor Manufacturer IRFF130 Datasheet, PDF Search Partnumber : Match&Start with "IRFF130" - Total : 6 ( 1/1 Page) 1 2 IRFF130 Distributor LX125 Distributor More IRFF13 0 Manufacturer Search Partnumber : Match&Start with "IRFF13 0 " Total : 2 ( 1/1 Page) WebIRFF131 Datasheet (PDF) - GE Solid State Description N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS IRFF131 Datasheet (HTML) - GE Solid State IRFF131 Product details N-Channel Enhancement-Mode Power Field-Effect Transistors 7.0A and 8.0A, 60V-100V rDS (on) = 0.18 Ω and 0.25 Ω Similar Part No. - IRFF13 1 More results
http://njsemi.com/datasheets/IRFF130.pdf WebThe IRFF130 is a HEXFET® N-channel Power MOSFET suitable for inverters, choppers and high energy pulse circuit. The efficient geometry and unique processing of this latest state of the art design achieves very low ON-state resistance combined with high transconductance. The HEXFET® transistor also features all of the well established advantages of MOSFET …
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WebDetroit is a city located in Wayne County Michigan.It is also the county seat of Wayne County.With a 2024 population of 621,193, it is the largest city in Michigan and the 27th … flashback maths year 3WebInfineon IRFF130 technical specifications, attributes, and parameters. Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line. Single N-Channel 100 V 25 W 28.5 nC Hexfet Transistor Through Hole - TO-39. flashback mary james charles makeup looksWebBuy IRFF130 INFINEON , Learn more about IRFF130 Single N-Channel 100 V 25 W 28.5 nC Hexfet Transistor Through Hole - TO-39, View the manufacturer, and stock, and datasheet pdf for the IRFF130 at Jotrin Electronics. flashback mary spiderWeb(a) No qualified handicapped person shall, on the basis of handicap, be excluded from participation in, be denied the benefits of, or otherwise be subjected to discrimination … flashback mary meme spiderWebIRFF130 N- CHANNEL MOSFET Rev. 20241021 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristics Symbol Min Max Unit DYNAMIC CHARACTERISTICS On-State Gate Charge V GS = 10V, I D = 8.0A, V DS = 50V Q g(on) - 28.51 nC Gate to Source Charge V GS = 10V, I D = 8.0A, V DS = 50V Q g - 6.34 nC Gate to Drain Charge V GS = 10V, I … can tardive dyskinesia cause dysphagiaWebN-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS, IRFF130 datasheet, IRFF130 circuit, IRFF130 data sheet : GESS, alldatasheet, datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs, and other semiconductors. can tar catch fireWebIRFF130 JANTX2N6796/JANTXV2N6796 International Rectifier HiRel Products, Inc. Case Outline and Dimensions - TO-205AF (TO-39) www.infineon.com/irhirel Infineon … cantar de mio cid english translation pdf